Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
DO-214AC (SMA)
Maximum Continuous Forward Current
3A
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
80A
Product details
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
3.850 OMR
0.154 OMR Each (In a Pack of 25) (ex VAT)
4.042 OMR
0.162 OMR Each (In a Pack of 25) (inc. VAT)
Standard
25
3.850 OMR
0.154 OMR Each (In a Pack of 25) (ex VAT)
4.042 OMR
0.162 OMR Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 100 | 0.154 OMR | 3.850 OMR |
125 - 225 | 0.094 OMR | 2.338 OMR |
250 - 1225 | 0.082 OMR | 2.062 OMR |
1250 - 2475 | 0.072 OMR | 1.788 OMR |
2500+ | 0.066 OMR | 1.650 OMR |
Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
DO-214AC (SMA)
Maximum Continuous Forward Current
3A
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
80A
Product details
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.