Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Series
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Product details
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
4.400 OMR
0.022 OMR Each (In a Pack of 200) (ex VAT)
4.620 OMR
0.023 OMR Each (In a Pack of 200) (inc. VAT)
Standard
200
4.400 OMR
0.022 OMR Each (In a Pack of 200) (ex VAT)
4.620 OMR
0.023 OMR Each (In a Pack of 200) (inc. VAT)
Standard
200
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
200 - 800 | 0.022 OMR | 4.400 OMR |
1000 - 1800 | 0.011 OMR | 2.200 OMR |
2000 - 4800 | 0.011 OMR | 2.200 OMR |
5000 - 9800 | 0.011 OMR | 2.200 OMR |
10000+ | 0.011 OMR | 2.200 OMR |
Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Series
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Product details
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.