N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
100 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.35mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.77V
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
0.135 OMR
Each (On a Reel of 2000) (ex VAT)
0.142 OMR
Each (On a Reel of 2000) (inc VAT)
2000
0.135 OMR
Each (On a Reel of 2000) (ex VAT)
0.142 OMR
Each (On a Reel of 2000) (inc VAT)
2000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
100 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.35mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.77V
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products