Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 DMN2004K-7

RS Stock No.: 708-2425PBrand: DiodesZetexManufacturers Part No.: DMN2004K-7
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Technical Document

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 DMN2004K-7
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Available in multiples of 25.

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25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 DMN2004K-7
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more