Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
3.410 OMR
0.341 OMR Each (In a Pack of 10) (ex VAT)
3.580 OMR
0.358 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
3.410 OMR
0.341 OMR Each (In a Pack of 10) (ex VAT)
3.580 OMR
0.358 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | 0.341 OMR | 3.410 OMR |
| 50 - 190 | 0.258 OMR | 2.585 OMR |
| 200 - 490 | 0.226 OMR | 2.255 OMR |
| 500+ | 0.209 OMR | 2.090 OMR |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details


