Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
10A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
510mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
275A
Country of Origin
China
Product details
Schottky Barrier Diodes, 10A to 60A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
2.310 OMR
0.462 OMR Each (In a Pack of 5) (ex VAT)
2.426 OMR
0.485 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
2.310 OMR
0.462 OMR Each (In a Pack of 5) (ex VAT)
2.426 OMR
0.485 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.462 OMR | 2.310 OMR |
50 - 245 | 0.415 OMR | 2.074 OMR |
250 - 1245 | 0.378 OMR | 1.890 OMR |
1250 - 2495 | 0.341 OMR | 1.706 OMR |
2500+ | 0.304 OMR | 1.522 OMR |
Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
10A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
510mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
275A
Country of Origin
China
Product details
Schottky Barrier Diodes, 10A to 60A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.