Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
250A
Country of Origin
China
Product details
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
1.568 OMR
0.314 OMR Each (In a Pack of 5) (ex VAT)
1.646 OMR
0.330 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
1.568 OMR
0.314 OMR Each (In a Pack of 5) (ex VAT)
1.646 OMR
0.330 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | 0.314 OMR | 1.568 OMR |
| 50 - 245 | 0.275 OMR | 1.375 OMR |
| 250 - 1245 | 0.236 OMR | 1.182 OMR |
| 1250 - 2495 | 0.231 OMR | 1.155 OMR |
| 2500+ | 0.231 OMR | 1.155 OMR |
Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
250A
Country of Origin
China
Product details
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.


