Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-323
Maximum Continuous Forward Current
15mA
Peak Reverse Repetitive Voltage
60V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Reverse Recovery Time
1ns
Peak Non-Repetitive Forward Surge Current
50mA
Product details
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
2.338 OMR
0.094 OMR Each (In a Pack of 25) (ex VAT)
2.455 OMR
0.099 OMR Each (In a Pack of 25) (inc. VAT)
Standard
25
2.338 OMR
0.094 OMR Each (In a Pack of 25) (ex VAT)
2.455 OMR
0.099 OMR Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 125 | 0.094 OMR | 2.338 OMR |
150 - 725 | 0.077 OMR | 1.925 OMR |
750 - 1475 | 0.066 OMR | 1.650 OMR |
1500+ | 0.055 OMR | 1.375 OMR |
Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-323
Maximum Continuous Forward Current
15mA
Peak Reverse Repetitive Voltage
60V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Reverse Recovery Time
1ns
Peak Non-Repetitive Forward Surge Current
50mA
Product details
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.