Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.8 nC @ 5 V, 3.5 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
5.638 OMR
0.226 OMR Each (In a Pack of 25) (ex VAT)
5.920 OMR
0.237 OMR Each (In a Pack of 25) (inc. VAT)
Standard
25
5.638 OMR
0.226 OMR Each (In a Pack of 25) (ex VAT)
5.920 OMR
0.237 OMR Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 125 | 0.226 OMR | 5.638 OMR |
150 - 725 | 0.187 OMR | 4.675 OMR |
750 - 1475 | 0.160 OMR | 3.988 OMR |
1500+ | 0.132 OMR | 3.300 OMR |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.8 nC @ 5 V, 3.5 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details