Infineon AIM SiC N-Channel MOSFET, 202 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R010M1TXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
202 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
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35.948 OMR
35.948 OMR Each (ex VAT)
37.745 OMR
37.745 OMR Each (inc. VAT)
1
35.948 OMR
35.948 OMR Each (ex VAT)
37.745 OMR
37.745 OMR Each (inc. VAT)
1
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| Quantity | Unit price |
|---|---|
| 1 - 9 | 35.948 OMR |
| 10+ | 32.356 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
202 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products