Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6 GHz
Pin Count
3
Dimensions
2.9 x 1.3 x 1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
165.000 OMR
0.055 OMR Each (On a Reel of 3000) (ex VAT)
173.250 OMR
0.058 OMR Each (On a Reel of 3000) (inc. VAT)
3000
165.000 OMR
0.055 OMR Each (On a Reel of 3000) (ex VAT)
173.250 OMR
0.058 OMR Each (On a Reel of 3000) (inc. VAT)
3000
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | 0.055 OMR | 165.000 OMR |
6000 - 6000 | 0.055 OMR | 165.000 OMR |
9000+ | 0.050 OMR | 148.500 OMR |
Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6 GHz
Pin Count
3
Dimensions
2.9 x 1.3 x 1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details