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3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1

RS Stock No.: 284-809Brand: InfineonManufacturers Part No.: DF11MR12W1M1HFB67BPSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B

Series

EasyPACK

Pin Count

23

Channel Mode

Enhancement

Number of Elements per Chip

3

Transistor Material

SiC

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66.890 OMR

66.890 OMR Each (ex VAT)

70.234 OMR

70.234 OMR Each (inc. VAT)

3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1

66.890 OMR

66.890 OMR Each (ex VAT)

70.234 OMR

70.234 OMR Each (inc. VAT)

3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B Infineon DF11MR12W1M1HFB67BPSA1
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B

Series

EasyPACK

Pin Count

23

Channel Mode

Enhancement

Number of Elements per Chip

3

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more