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Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray Infineon FF2000UXTR33T2M1BPSA1

RS Stock No.: 277-194Brand: InfineonManufacturers Part No.: FF2000UXTR33T2M1BPSA1
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Technical Document

Specifications

Channel Type

Dual N

Maximum Continuous Drain Current

925 A

Maximum Drain Source Voltage

3300 V

Package Type

Tray

Series

XHP

Mounting Type

Screw Mount

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Country of Origin

Germany

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3,662.095 OMR

3,662.095 OMR Each (ex VAT)

3,845.200 OMR

3,845.200 OMR Each (inc. VAT)

Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray Infineon FF2000UXTR33T2M1BPSA1

3,662.095 OMR

3,662.095 OMR Each (ex VAT)

3,845.200 OMR

3,845.200 OMR Each (inc. VAT)

Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray Infineon FF2000UXTR33T2M1BPSA1
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

Dual N

Maximum Continuous Drain Current

925 A

Maximum Drain Source Voltage

3300 V

Package Type

Tray

Series

XHP

Mounting Type

Screw Mount

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

Country of Origin

Germany

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more