Infineon FF900R12ME7BPSA1, P-Channel Dual IGBT, 900 A 1200 V AG-ECONOD, Through Hole
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Configuration
Dual
Package Type
AG-ECONOD
Mounting Type
Through Hole
Channel Type
P
Country of Origin
Austria
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142.527 OMR
142.527 OMR Each (ex VAT)
149.653 OMR
149.653 OMR Each (inc. VAT)
1
142.527 OMR
142.527 OMR Each (ex VAT)
149.653 OMR
149.653 OMR Each (inc. VAT)
1
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Configuration
Dual
Package Type
AG-ECONOD
Mounting Type
Through Hole
Channel Type
P
Country of Origin
Austria
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products