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Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

RS Stock No.: 244-5394PBrand: InfineonManufacturers Part No.: FP25R12W2T4BOMA1
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Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

39 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

175 W

Number of Transistors

7

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P.O.A.

Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
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1P.O.A.
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15P.O.A.

P.O.A.

Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
Stock information temporarily unavailable.
Select packaging type

Production pack (Tray)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

39 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

175 W

Number of Transistors

7

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more