Technical Document
Specifications
Brand
InfineonMounting Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current
11.8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Pin Count
2 + Tab
Maximum Forward Voltage Drop
2.3V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
37A
Country of Origin
Malaysia
Product details
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
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1.440 OMR
Each (In a Pack of 2) (ex VAT)
1.512 OMR
Each (In a Pack of 2) (inc VAT)
2
1.440 OMR
Each (In a Pack of 2) (ex VAT)
1.512 OMR
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | 1.440 OMR | 2.880 OMR |
20 - 48 | 1.255 OMR | 2.510 OMR |
50 - 98 | 1.170 OMR | 2.340 OMR |
100 - 198 | 1.095 OMR | 2.190 OMR |
200+ | 1.010 OMR | 2.020 OMR |
Technical Document
Specifications
Brand
InfineonMounting Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current
11.8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Pin Count
2 + Tab
Maximum Forward Voltage Drop
2.3V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
37A
Country of Origin
Malaysia
Product details
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI