Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
429 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Energy Rating
2.02mJ
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1.365 OMR
Each (ex VAT)
1.433 OMR
Each (inc VAT)
1
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
429 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Energy Rating
2.02mJ
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products