Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1

RS Stock No.: 284-717Brand: InfineonManufacturers Part No.: IMT65R030M1HXUMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

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Stock information temporarily unavailable.

8.816 OMR

8.816 OMR Each (ex VAT)

9.257 OMR

9.257 OMR Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
Select packaging type

8.816 OMR

8.816 OMR Each (ex VAT)

9.257 OMR

9.257 OMR Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit price
1 - 98.816 OMR
10 - 998.008 OMR
100+7.518 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more