Infineon CoolSiC Silicon N-Channel MOSFET, 53 A, 650 V, 4-Pin TO-247-4 IMZA65R030M1HXKSA1

RS Stock No.: 232-0403Brand: InfineonManufacturers Part No.: IMZA65R030M1HXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.042 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

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Stock information temporarily unavailable.

6.100 OMR

6.100 OMR Each (ex VAT)

6.405 OMR

6.405 OMR Each (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 53 A, 650 V, 4-Pin TO-247-4 IMZA65R030M1HXKSA1
Select packaging type

6.100 OMR

6.100 OMR Each (ex VAT)

6.405 OMR

6.405 OMR Each (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 53 A, 650 V, 4-Pin TO-247-4 IMZA65R030M1HXKSA1
Stock information temporarily unavailable.
Select packaging type

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QuantityUnit price
1 - 46.100 OMR
5 - 95.797 OMR
10 - 245.555 OMR
25 - 495.324 OMR
50+5.038 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.042 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more