Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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5.797 OMR
2.898 OMR Each (In a Pack of 2) (ex VAT)
6.087 OMR
3.043 OMR Each (In a Pack of 2) (inc. VAT)
Standard
2
5.797 OMR
2.898 OMR Each (In a Pack of 2) (ex VAT)
6.087 OMR
3.043 OMR Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | 2.898 OMR | 5.797 OMR |
| 20 - 98 | 2.470 OMR | 4.939 OMR |
| 100 - 198 | 2.140 OMR | 4.279 OMR |
| 200 - 498 | 2.030 OMR | 4.059 OMR |
| 500+ | 1.820 OMR | 3.641 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products