Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
168 nC @ 10 V
Length
10.31mm
Maximum Operating Temperature
+175 °C
Series
IPB020N10N5
Minimum Operating Temperature
-55 °C
Height
4.57mm
Forward Diode Voltage
1.2V
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2.770 OMR
Each (In a Pack of 5) (ex VAT)
2.908 OMR
Each (In a Pack of 5) (inc VAT)
5
2.770 OMR
Each (In a Pack of 5) (ex VAT)
2.908 OMR
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 2.770 OMR | 13.850 OMR |
25 - 95 | 2.360 OMR | 11.800 OMR |
100 - 245 | 2.040 OMR | 10.200 OMR |
250 - 495 | 1.935 OMR | 9.675 OMR |
500+ | 1.735 OMR | 8.675 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
168 nC @ 10 V
Length
10.31mm
Maximum Operating Temperature
+175 °C
Series
IPB020N10N5
Minimum Operating Temperature
-55 °C
Height
4.57mm
Forward Diode Voltage
1.2V