Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
0.750 OMR
Each (In a Pack of 5) (ex VAT)
0.788 OMR
Each (In a Pack of 5) (inc VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Select packaging type
5
0.750 OMR
Each (In a Pack of 5) (ex VAT)
0.788 OMR
Each (In a Pack of 5) (inc VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.750 OMR | 3.750 OMR |
50 - 120 | 0.685 OMR | 3.425 OMR |
125 - 245 | 0.640 OMR | 3.200 OMR |
250 - 495 | 0.595 OMR | 2.975 OMR |
500+ | 0.555 OMR | 2.775 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC