Infineon OptiMOS FD N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK IPB117N20NFDATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Series
OptiMOS FD
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.31mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Maximum Operating Temperature
+170 °C
Number of Elements per Chip
1
Width
9.45mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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3.267 OMR
1.634 OMR Each (Supplied as a Tape) (ex VAT)
3.430 OMR
1.716 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
2
3.267 OMR
1.634 OMR Each (Supplied as a Tape) (ex VAT)
3.430 OMR
1.716 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
2
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Series
OptiMOS FD
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.31mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Maximum Operating Temperature
+170 °C
Number of Elements per Chip
1
Width
9.45mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products