Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1

RS Stock No.: 262-5861Brand: InfineonManufacturers Part No.: IPD023N04NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

143 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

3.245 OMR

0.649 OMR Each (In a Pack of 5) (ex VAT)

3.407 OMR

0.681 OMR Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1
Select packaging type

3.245 OMR

0.649 OMR Each (In a Pack of 5) (ex VAT)

3.407 OMR

0.681 OMR Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 450.649 OMR3.245 OMR
50 - 1200.578 OMR2.888 OMR
125 - 2450.539 OMR2.695 OMR
250 - 4950.500 OMR2.502 OMR
500+0.258 OMR1.292 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

143 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more