Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
0.670 OMR
Each (In a Pack of 5) (ex VAT)
0.704 OMR
Each (In a Pack of 5) (inc VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Select packaging type
5
0.670 OMR
Each (In a Pack of 5) (ex VAT)
0.704 OMR
Each (In a Pack of 5) (inc VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.670 OMR | 3.350 OMR |
50 - 120 | 0.575 OMR | 2.875 OMR |
125 - 245 | 0.545 OMR | 2.725 OMR |
250 - 495 | 0.525 OMR | 2.625 OMR |
500+ | 0.425 OMR | 2.125 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC