Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1

RS Stock No.: 262-5863Brand: InfineonManufacturers Part No.: IPD028N06NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

3.795 OMR

0.759 OMR Each (In a Pack of 5) (ex VAT)

3.985 OMR

0.797 OMR Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Select packaging type

3.795 OMR

0.759 OMR Each (In a Pack of 5) (ex VAT)

3.985 OMR

0.797 OMR Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 450.759 OMR3.795 OMR
50 - 1200.632 OMR3.162 OMR
125 - 2450.583 OMR2.915 OMR
250 - 4950.544 OMR2.722 OMR
500+0.418 OMR2.090 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more