Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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0.460 OMR
Each (In a Pack of 5) (ex VAT)
0.483 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
0.460 OMR
Each (In a Pack of 5) (ex VAT)
0.483 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | 0.460 OMR | 2.300 OMR |
| 50 - 120 | 0.405 OMR | 2.025 OMR |
| 125 - 245 | 0.385 OMR | 1.925 OMR |
| 250 - 495 | 0.355 OMR | 1.775 OMR |
| 500+ | 0.185 OMR | 0.925 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products