Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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0.450 OMR
Each (In a Pack of 10) (ex VAT)
0.472 OMR
Each (In a Pack of 10) (inc VAT)
10
0.450 OMR
Each (In a Pack of 10) (ex VAT)
0.472 OMR
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | 0.450 OMR | 4.500 OMR |
100 - 240 | 0.350 OMR | 3.500 OMR |
250 - 490 | 0.330 OMR | 3.300 OMR |
500 - 990 | 0.305 OMR | 3.050 OMR |
1000+ | 0.285 OMR | 2.850 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
IPD25CN10N G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
7.47mm
Number of Elements per Chip
1
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V