Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + 2 Tab
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Series
IPD320N20N3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
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1.015 OMR
Each (In a Pack of 10) (ex VAT)
1.066 OMR
Each (In a Pack of 10) (inc VAT)
10
1.015 OMR
Each (In a Pack of 10) (ex VAT)
1.066 OMR
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | 1.015 OMR | 10.150 OMR |
100 - 240 | 0.815 OMR | 8.150 OMR |
250 - 490 | 0.775 OMR | 7.750 OMR |
500 - 990 | 0.710 OMR | 7.100 OMR |
1000+ | 0.585 OMR | 5.850 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3 + 2 Tab
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Series
IPD320N20N3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm