Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
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838.750 OMR
0.336 OMR Each (On a Reel of 2500) (ex VAT)
880.688 OMR
0.353 OMR Each (On a Reel of 2500) (inc. VAT)
2500
838.750 OMR
0.336 OMR Each (On a Reel of 2500) (ex VAT)
880.688 OMR
0.353 OMR Each (On a Reel of 2500) (inc. VAT)
2500
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™-T
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.026 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products