N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK Infineon IPD50R380CEAUMA1

RS Stock No.: 130-0897Brand: InfineonManufacturers Part No.: IPD50R380CEAUMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

14.1 A

Maximum Drain Source Voltage

550 V

Series

CoolMOS CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

98 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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0.320 OMR

Each (In a Pack of 10) (ex VAT)

0.336 OMR

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK Infineon IPD50R380CEAUMA1
Select packaging type

0.320 OMR

Each (In a Pack of 10) (ex VAT)

0.336 OMR

Each (In a Pack of 10) (inc VAT)

N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK Infineon IPD50R380CEAUMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 400.320 OMR3.200 OMR
50 - 4900.305 OMR3.050 OMR
500 - 9900.220 OMR2.200 OMR
1000 - 24900.180 OMR1.800 OMR
2500+0.175 OMR1.750 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

14.1 A

Maximum Drain Source Voltage

550 V

Series

CoolMOS CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

98 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more