Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0092 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1
38.775 OMR
0.776 OMR Each (In a Tube of 50) (ex VAT)
40.714 OMR
0.815 OMR Each (In a Tube of 50) (inc. VAT)
50
38.775 OMR
0.776 OMR Each (In a Tube of 50) (ex VAT)
40.714 OMR
0.815 OMR Each (In a Tube of 50) (inc. VAT)
50
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Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 0.776 OMR | 38.775 OMR |
| 100 - 200 | 0.627 OMR | 31.350 OMR |
| 250 - 450 | 0.578 OMR | 28.875 OMR |
| 500 - 950 | 0.544 OMR | 27.225 OMR |
| 1000+ | 0.517 OMR | 25.850 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0092 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1


