Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ -T2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0028 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
71.775 OMR
1.436 OMR Each (In a Tube of 50) (ex VAT)
75.364 OMR
1.508 OMR Each (In a Tube of 50) (inc. VAT)
50
71.775 OMR
1.436 OMR Each (In a Tube of 50) (ex VAT)
75.364 OMR
1.508 OMR Each (In a Tube of 50) (inc. VAT)
50
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ -T2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0028 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si