Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF

RS Stock No.: 222-4738Brand: InfineonManufacturers Part No.: IRF6636TRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

81 A

Maximum Drain Source Voltage

20 V

Series

HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.0064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

2,244.000 OMR

0.468 OMR Each (On a Reel of 4800) (ex VAT)

2,356.200 OMR

0.491 OMR Each (On a Reel of 4800) (inc. VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF

4800

Available in multiples of 4800
48002,244.000 OMR
96004,488.000 OMR
144006,732.000 OMR
192008,976.000 OMR
2400011,220.000 OMR
2880013,464.000 OMR
3360015,708.000 OMR
3840017,952.000 OMR
4320020,196.000 OMR
4800022,440.000 OMR
5280024,684.000 OMR
5760026,928.000 OMR
6240029,172.000 OMR
6720031,416.000 OMR
7200033,660.000 OMR

2,244.000 OMR

0.468 OMR Each (On a Reel of 4800) (ex VAT)

2,356.200 OMR

0.491 OMR Each (On a Reel of 4800) (inc. VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF
Stock information temporarily unavailable.

4800

Available in multiples of 4800
48002,244.000 OMR
96004,488.000 OMR
144006,732.000 OMR
192008,976.000 OMR
2400011,220.000 OMR
2880013,464.000 OMR
3360015,708.000 OMR
3840017,952.000 OMR
4320020,196.000 OMR
4800022,440.000 OMR
5280024,684.000 OMR
5760026,928.000 OMR
6240029,172.000 OMR
6720031,416.000 OMR
7200033,660.000 OMR

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

81 A

Maximum Drain Source Voltage

20 V

Series

HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.0064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more