Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si
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0.370 OMR
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0.388 OMR
Each (On a Reel of 4800) (inc VAT)
4800
0.370 OMR
Each (On a Reel of 4800) (ex VAT)
0.388 OMR
Each (On a Reel of 4800) (inc VAT)
4800
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si