Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Stock information temporarily unavailable.
Please check again later.
0.375 OMR
Each (In a Pack of 10) (ex VAT)
0.394 OMR
Each (In a Pack of 10) (inc VAT)
10
0.375 OMR
Each (In a Pack of 10) (ex VAT)
0.394 OMR
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | 0.375 OMR | 3.750 OMR |
50 - 90 | 0.290 OMR | 2.900 OMR |
100 - 240 | 0.275 OMR | 2.750 OMR |
250 - 490 | 0.255 OMR | 2.550 OMR |
500+ | 0.235 OMR | 2.350 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V