N-Channel MOSFET, 79 A, 30 V, 8-Pin PQFN 5 x 6 Infineon IRFH5304TRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
46 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6mm
Typical Gate Charge @ Vgs
41 nC @ 15 V
Height
0.85mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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4.015 OMR
0.402 OMR Each (In a Pack of 10) (ex VAT)
4.216 OMR
0.422 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
4.015 OMR
0.402 OMR Each (In a Pack of 10) (ex VAT)
4.216 OMR
0.422 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | 0.402 OMR | 4.015 OMR |
| 50 - 90 | 0.380 OMR | 3.795 OMR |
| 100 - 240 | 0.341 OMR | 3.410 OMR |
| 250 - 490 | 0.308 OMR | 3.080 OMR |
| 500+ | 0.297 OMR | 2.970 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
30 V
Package Type
PQFN 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
46 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6mm
Typical Gate Charge @ Vgs
41 nC @ 15 V
Height
0.85mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products