Infineon IRGPS46160DPBF IGBT, 240 A 600 V, 3-Pin Super-247, Through Hole
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
750 W
Package Type
Super-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
8 → 30kHz
Transistor Configuration
Single
Dimensions
16 x 5.5 x 20.8mm
Maximum Operating Temperature
+175 °C
Energy Rating
500mJ
Minimum Operating Temperature
-55 °C
Country of Origin
Mexico
Product details
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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10.906 OMR
10.906 OMR Each (ex VAT)
11.451 OMR
11.451 OMR Each (inc. VAT)
Standard
1
10.906 OMR
10.906 OMR Each (ex VAT)
11.451 OMR
11.451 OMR Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 1 - 9 | 10.906 OMR |
| 10 - 24 | 10.373 OMR |
| 25 - 49 | 9.938 OMR |
| 50 - 99 | 9.278 OMR |
| 100+ | 8.750 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
750 W
Package Type
Super-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
8 → 30kHz
Transistor Configuration
Single
Dimensions
16 x 5.5 x 20.8mm
Maximum Operating Temperature
+175 °C
Energy Rating
500mJ
Minimum Operating Temperature
-55 °C
Country of Origin
Mexico
Product details
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products