Website Outage

Due to essential maintenance the website will be unavailable from 7am to 11am (Oman time) Saturday 10th May. We apologise for any inconvenience.

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

RS Stock No.: 193-442Brand: IXYSManufacturers Part No.: IXFH96N20PDistrelec Article No.: 30253340
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

96 A

Maximum Drain Source Voltage

200 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

600 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

145 nC @ 10 V

Width

5.3mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Stock information temporarily unavailable.

3.108 OMR

3.108 OMR Each (ex VAT)

3.263 OMR

3.263 OMR Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P
Select packaging type

3.108 OMR

3.108 OMR Each (ex VAT)

3.263 OMR

3.263 OMR Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

96 A

Maximum Drain Source Voltage

200 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

600 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

145 nC @ 10 V

Width

5.3mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in