Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
600 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
240 nC @ 10 V
Width
25.07mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.6mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
21.100 OMR
21.100 OMR Each (ex VAT)
22.155 OMR
22.155 OMR Each (inc. VAT)
1
21.100 OMR
21.100 OMR Each (ex VAT)
22.155 OMR
22.155 OMR Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 1 | 21.100 OMR |
2 - 4 | 20.475 OMR |
5+ | 20.050 OMR |
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
600 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
240 nC @ 10 V
Width
25.07mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.6mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS