Promotional Code

Use promotional code RSOMN5 and get extra 5% off on the price of all products | Payment Options: Debit or Credit Card, Wire Transfer, Cash or Cheque

IXYS HiperFET, Polar N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P

RS Stock No.: 194-344Brand: IXYSManufacturers Part No.: IXFR44N80PDistrelec Article No.: 30253397
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Polar

Package Type

ISOPLUS247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

200 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Number of Elements per Chip

1

Length

16.13mm

Maximum Operating Temperature

+150 °C

Height

21.34mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

12.463 OMR

12.463 OMR Each (ex VAT)

13.086 OMR

13.086 OMR Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P
Select packaging type

12.463 OMR

12.463 OMR Each (ex VAT)

13.086 OMR

13.086 OMR Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Polar

Package Type

ISOPLUS247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

200 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Number of Elements per Chip

1

Length

16.13mm

Maximum Operating Temperature

+150 °C

Height

21.34mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more