IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

RS Stock No.: 168-4497Brand: IXYSManufacturers Part No.: MDI75-12A3
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Technical Document

Specifications

Brand

IXYS

Product Type

IGBT Module

Configuration

Single

Package Type

Y4-M5

Channel Type

Type N

Pin Count

7

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

34 mm

Length

94mm

Height

30mm

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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View all in IGBTs

Stock information temporarily unavailable.

201.538 OMR

33.590 OMR Each (In a Box of 6) (ex VAT)

211.615 OMR

35.269 OMR Each (In a Box of 6) (inc. VAT)

IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

201.538 OMR

33.590 OMR Each (In a Box of 6) (ex VAT)

211.615 OMR

35.269 OMR Each (In a Box of 6) (inc. VAT)

IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Product Type

IGBT Module

Configuration

Single

Package Type

Y4-M5

Channel Type

Type N

Pin Count

7

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

34 mm

Length

94mm

Height

30mm

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more