Technical Document
Specifications
Brand
IXYSProduct Type
IGBT Module
Configuration
Single
Package Type
Y4-M5
Channel Type
Type N
Pin Count
7
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
34 mm
Length
94mm
Height
30mm
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
201.538 OMR
33.590 OMR Each (In a Box of 6) (ex VAT)
211.615 OMR
35.269 OMR Each (In a Box of 6) (inc. VAT)
6
201.538 OMR
33.590 OMR Each (In a Box of 6) (ex VAT)
211.615 OMR
35.269 OMR Each (In a Box of 6) (inc. VAT)
Stock information temporarily unavailable.
6
Technical Document
Specifications
Brand
IXYSProduct Type
IGBT Module
Configuration
Single
Package Type
Y4-M5
Channel Type
Type N
Pin Count
7
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
34 mm
Length
94mm
Height
30mm
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


