IXYS MID75-12A3 Single IGBT Module, 90 A 1200 V, 7-Pin Y4 M5, Panel Mount
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y4 M5
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Single
Dimensions
94 x 34 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
29.266 OMR
29.266 OMR Each (ex VAT)
30.729 OMR
30.729 OMR Each (inc. VAT)
1
29.266 OMR
29.266 OMR Each (ex VAT)
30.729 OMR
30.729 OMR Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 4 | 29.266 OMR |
| 5 - 9 | 25.844 OMR |
| 10 - 24 | 25.218 OMR |
| 25+ | 24.959 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y4 M5
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Single
Dimensions
94 x 34 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products