IXYS MIXA300PF1200TSF, SimBus F , N-Channel Dual IGBT Transistor Module, 465 A max, 1200 V, PCB Mount
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
465 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
1.5 kW
Package Type
SimBus F
Configuration
Dual
Mounting Type
PCB Mount
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
152 x 62 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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16.080 OMR
Each (ex VAT)
16.884 OMR
Each (inc VAT)
1
16.080 OMR
Each (ex VAT)
16.884 OMR
Each (inc VAT)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
465 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
1.5 kW
Package Type
SimBus F
Configuration
Dual
Mounting Type
PCB Mount
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
152 x 62 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products