IXYS MUBW15-12A6K 3 Phase Bridge IGBT Module, 19 A 1200 V, 25-Pin, PCB Mount
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
19 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
25
Transistor Configuration
3 Phase
Dimensions
82 x 37.4 x 17.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
27.353 OMR
27.353 OMR Each (ex VAT)
28.721 OMR
28.721 OMR Each (inc. VAT)
1
27.353 OMR
27.353 OMR Each (ex VAT)
28.721 OMR
28.721 OMR Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 1 | 27.353 OMR |
| 2 - 4 | 22.616 OMR |
| 5 - 9 | 21.498 OMR |
| 10 - 19 | 20.649 OMR |
| 20+ | 20.129 OMR |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
19 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
25
Transistor Configuration
3 Phase
Dimensions
82 x 37.4 x 17.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products