Technical Document
Specifications
Brand
LittelfuseMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
500 V
Maximum Gate Emitter Voltage
500V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
9.65 x 10.29 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
Please check again later.
0.660 OMR
Each (In a Pack of 5) (ex VAT)
0.693 OMR
Each (In a Pack of 5) (inc VAT)
5
0.660 OMR
Each (In a Pack of 5) (ex VAT)
0.693 OMR
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.660 OMR | 3.300 OMR |
50 - 95 | 0.645 OMR | 3.225 OMR |
100+ | 0.620 OMR | 3.100 OMR |
Technical Document
Specifications
Brand
LittelfuseMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
500 V
Maximum Gate Emitter Voltage
500V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
9.65 x 10.29 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.