N-Channel MOSFET, 2.8 A, 500 V, 3-Pin DPAK MagnaChip MDD3N50GRH

RS Stock No.: 871-6649Brand: MagnaChipManufacturers Part No.: MDD3N50GRH
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

6.75 nC @ 10 V

Width

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.39mm

Country of Origin

China

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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0.165 OMR

Each (In a Tube of 50) (ex VAT)

0.173 OMR

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 2.8 A, 500 V, 3-Pin DPAK MagnaChip MDD3N50GRH

0.165 OMR

Each (In a Tube of 50) (ex VAT)

0.173 OMR

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 2.8 A, 500 V, 3-Pin DPAK MagnaChip MDD3N50GRH
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 2000.165 OMR8.250 OMR
250 - 9500.135 OMR6.750 OMR
1000 - 24500.120 OMR6.000 OMR
2500+0.115 OMR5.750 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

6.75 nC @ 10 V

Width

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.39mm

Country of Origin

China

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more