Technical Document
Specifications
Brand
MicrochipChannel Type
P
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
40 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.06mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.08mm
Height
5.33mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Country of Origin
Philippines
Product details
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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0.245 OMR
Each (In a Bag of 1000) (ex VAT)
0.257 OMR
Each (In a Bag of 1000) (inc VAT)
1000
0.245 OMR
Each (In a Bag of 1000) (ex VAT)
0.257 OMR
Each (In a Bag of 1000) (inc VAT)
1000
Technical Document
Specifications
Brand
MicrochipChannel Type
P
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
40 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.06mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.08mm
Height
5.33mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2V
Country of Origin
Philippines
Product details
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.