Technical Document
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
240 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Product details
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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0.480 OMR
Each (Supplied in a Bag) (ex VAT)
0.504 OMR
Each (Supplied in a Bag) (inc VAT)
10
0.480 OMR
Each (Supplied in a Bag) (ex VAT)
0.504 OMR
Each (Supplied in a Bag) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Bag |
---|---|---|
10 - 20 | 0.480 OMR | 4.800 OMR |
30 - 90 | 0.455 OMR | 4.550 OMR |
100+ | 0.415 OMR | 4.150 OMR |
Technical Document
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
240 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Product details
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.