Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
2.970 OMR
0.148 OMR Each (In a Pack of 20) (ex VAT)
3.118 OMR
0.155 OMR Each (In a Pack of 20) (inc. VAT)
20
2.970 OMR
0.148 OMR Each (In a Pack of 20) (ex VAT)
3.118 OMR
0.155 OMR Each (In a Pack of 20) (inc. VAT)
20
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 140 | 0.148 OMR | 2.970 OMR |
| 160 - 740 | 0.088 OMR | 1.760 OMR |
| 760 - 1480 | 0.088 OMR | 1.760 OMR |
| 1500+ | 0.066 OMR | 1.320 OMR |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details


