Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215

RS Stock No.: 509-324Brand: NexperiaManufacturers Part No.: BSH108,215
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Width

1.4mm

Height

1mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

2.970 OMR

0.148 OMR Each (In a Pack of 20) (ex VAT)

3.118 OMR

0.155 OMR Each (In a Pack of 20) (inc. VAT)

Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215

2.970 OMR

0.148 OMR Each (In a Pack of 20) (ex VAT)

3.118 OMR

0.155 OMR Each (In a Pack of 20) (inc. VAT)

Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215
Stock information temporarily unavailable.

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
20 - 1400.148 OMR2.970 OMR
160 - 7400.088 OMR1.760 OMR
760 - 14800.088 OMR1.760 OMR
1500+0.066 OMR1.320 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Width

1.4mm

Height

1mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more